STripFET™ V Series Power MOSFETs

STMicroelectronics' low voltage MOSFETs are critical contributors to the efficiency of switching topologies used in DC/DC converter and motor control applications. For example, with a synchronous buck converter, the major contributions to the losses in high frequency switching are switching losses in the high side (H-S) FET (control FET) and conduction losses in the low side (L-S) FET (sync FET). ST's STripFET V technology has one of the best switching figures of merit (RDS(on) * Qg) and thus, is ideal for H-S. Additionally, the STripFET VI DeepGATE™ has one of the lowest RDS (on) values per area and thus, is better for L-S. ST offers a series of 30-volt (H5 and H6) and 40-volt (F5 and F6) FETs in PowerFLAT™ packages to combine the features of the latest STripFET technologies for H-S and L-S combinations with the improved power density and thermal capability of PowerFLAT packaging.

Features

• RDS(on) * Qg industry benchmark
• Extremely low on-resistance RDS(on)
• Very low switching gate charge
• High avalanche ruggedness
• Low gate drive power losses
• High power density