The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives

The EPC9048 development boards are in a half bridge topology with onboard gate drives, featuring the EPC2034 eGaN field effect transistors (FETs).

This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.

The EPC9080 development board is a 100 V maximum device voltage,30 A maximum output current, half bridge with onboard gate drives

The EPC9013 development board features the 100 V EPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs).

The EPC9126HC development board is primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak). The board is shipped with an EPC2001C 100V maximum device voltage capable of current pulses up to 150 A.

The EPC9002 development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN®) field effect transistor (FET).

The EPC9126 development board is primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak). The board is shipped with an EPC2016C 100V maximum device voltage capable of current pulses up to 75 A.

The EPC9017 development board is 2” x 1.5” and features three EPC2001 eGaN FETs in a half bridge configuration using the Texas Instruments LM5113 gate driver.