EPC9001: 15A @ 0 ~ 40V, Half Bridge

Summary

The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2015 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2015 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9001 development board is 2" x 1.5" and contains not only two EPC2015 eGaN FET in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

Specifications

Manufacturer EPC
Category Power Management
Sub-Category Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number 917-1010-ND
Eval Board Supplier EPC
Eval Board Board not Stocked
Configuration 1 Half H-Bridge
Voltage Out Range 0 ~ 40 V
Current Out 15 A
Interface PWM, Dual
Features Internal Bootstrap Circuit
Shoot Through Protection
Under Voltage Protection (UVP)
Switching Frequency (Max) Not given
Component Count + Extras 27 + 7
Design Author EPC
Main I.C. Base Part EPC2015
Date Created By Author 2014-02
Date Added To Library 2025-10

Eval Board

Order a fully assembled board:

Quantity Available: 0

Quantity:

Support Documents & Media

EPC9001 - User Guide EPC2015 - Datasheet

Media

EPC9001 - Schematic - Full EPC9001 - Board - Full EPC9001 - Chart 1 - Full EPC9001 - Chart 2 - Full EPC9001 - Chart 3 - Full