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- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
TCR3UG Low-Dropout Regulators
Toshiba’s latest LDO technology has created an extremely low quiescent current LDO in the smallest 300 mA package available on the market.
UMOS9 DPAK MOSFETs
Toshiba has expanded its family of ultra-high-efficiency, low-voltage MOSFETs by adding new 40 V and 60 V devices to the company’s existing lineup.
TB67H400AFTG Brush Motor Driver IC
Toshiba's TB67H400AFTG is a brushed DC motor driver of a PWM chopper-type and is a dual channel H-SW driver which can control two brushed DC motors.
TB67S109AFTG Stepping Motor Driver IC
Toshiba's TB67S109A is a two-phase bipolar stepping motor driver using a PWM chopper and has a built in clock in decoder.
Fifth-Generation Deep Trench Process Super Junction MOSFETs
Toshiba's next generation of super junction deep trench semiconductor technology for high-efficient power MOSFETs is based on the new DTMOS V process and operate with lower EMI noise and reduced on resistance.
TCR3DGxx LDO IC PMIC Voltage Regulators
Toshiba’s latest LDO packaging has created the smallest 300 mA LDO currently available on the market.
ESD Protection Diodes
Duration: 5 minutes
The tutorial will review the unique features of the Toshiba ESD protection diodes and introduce the product portfolio.
Load Switch IC
Duration: 10 minutes
Introduction to load switch ICs and Toshiba's IC product portfolio which highlights the features, benefits, and also provides examples of IC applications.
Low Dropout Regulator (LDO)
Low Dropout Regulators are commonly found and used in power management ICs for any demanding voltage regulation applications.
TCR5AM series is suited for the application which needs high current and low dropout
Toshiba TVS Diode (EAP-IV)
Toshiba’s 4th generation ESD protection diode (EAP-IV), achieves top level low dynamic resistance and low clamping voltages. It protects devices from ESD circuit destruction and degradation over time.
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