Name: SQM110P06-8M9L_GE3
Brand: Vishay Siliconix
SKU: SQM110P06-8M9L_GE3TR-ND
Price: 4.4044 EUR
Availability: InStock

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SQM110P06-8M9L_GE3
cms-digikey-product-number	SQM110P06-8M9L_GE3TR-ND - Tape & Reel (TR) SQM110P06-8M9L_GE3CT-ND - Cut Tape (CT) SQM110P06-8M9L_GE3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SQM110P06-8M9L_GE3
cms-description	MOSFET P-CH 60V 110A TO263
cms-standard-lead-time	25 Weeks
cms-customer-reference
cms-detailed-description	P-Channel 60 V 110A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet
cms-eda-cad-models	SQM110P06-8M9L_GE3 Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7450 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	SQM110