Name: SIS128LDN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS128LDN-T1-GE3TR-ND
Price: 1.6093 EUR
Availability: InStock

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SIS128LDN-T1-GE3
DigiKey Part Number	SIS128LDN-T1-GE3TR-ND - Tape & Reel (TR) SIS128LDN-T1-GE3CT-ND - Cut Tape (CT) SIS128LDN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIS128LDN-T1-GE3
Description	MOSFET N-CH 80V 10.2A/33.7A PPAK
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 10.2A (Ta), 33.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet	Datasheet
EDA/CAD Models	SIS128LDN-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 40 V
Part Status Active	Power Dissipation (Max) 3.6W (Ta), 39W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 80 V	Supplier Device Package PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C 10.2A (Ta), 33.7A (Tc)	Package / Case PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SIS128
Rds On (Max) @ Id, Vgs 15.6mOhm @ 10A, 10V

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Substitutes (2)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
RQ3L050GNTB	Rohm Semiconductor	6.556	RQ3L050GNTBCT-ND	1,10000 €	Similar
RQ7E110AJTCR	Rohm Semiconductor	337	RQ7E110AJTCRCT-ND	1,36000 €	Similar

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Cut Tape (CT) & Digi-Reel®

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Tape & Reel (TR)

Manufacturers Standard Package

Unit Price without VAT:	1,33000 €
Unit Price with VAT:	1,60930 €

SIS128LDN-T1-GE3