Name: IRFIB7N50APBF
Brand: Vishay Siliconix
SKU: IRFIB7N50APBF-ND
Price: 5.324 EUR
Availability: InStock

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IRFIB7N50APBF
cms-digikey-product-number	IRFIB7N50APBF-ND
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	IRFIB7N50APBF
cms-description	MOSFET N-CH 500V 6.6A TO220-3
cms-standard-lead-time	20 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 500 V 6.6A (Tc) 60W (Tc) Through Hole TO-220-3
cms-datasheet	cms-datasheet
cms-eda-cad-models	IRFIB7N50APBF Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1423 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3 Full Pack, Isolated Tab
Base Product Number	IRFIB7