N-Channel 600 V 8A (Tc) 41.7W (Tc) Through Hole ITO-220S
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TSM60NB600CF C0G

DigiKey Part Number
TSM60NB600CFC0G-ND
Manufacturer
Taiwan Semiconductor Corporation
Manufacturer Product Number
TSM60NB600CF C0G
Description
MOSFET N-CH 600V 8A ITO220S
Customer Reference
Detailed Description
N-Channel 600 V 8A (Tc) 41.7W (Tc) Through Hole ITO-220S
EDA/CAD Models
TSM60NB600CF C0G Models
Product Attributes
Type
Description
Select All
Category
Mfr
Taiwan Semiconductor Corporation
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
528 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
41.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
ITO-220S
Package / Case
TO-220-3 Full Pack
Base Product Number
TSM60
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
12,53000 €2,53 €
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2,53000 €
Unit Price with VAT:3,06130 €