Name: R6025JNZ4C13
Brand: Rohm Semiconductor
SKU: R6025JNZ4C13-ND
Price: 10.2366 EUR
Availability: InStock

cms-photo-disclaimer

R6025JNZ4C13
cms-digikey-product-number	R6025JNZ4C13-ND
cms-manufacturer	Rohm Semiconductor
cms-manufacturer-product-number	R6025JNZ4C13
cms-description	MOSFET N-CH 600V 25A TO247G
cms-standard-lead-time	18 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 600 V 25A (Tc) 306W (Tc) Through Hole TO-247G
cms-datasheet	cms-datasheet

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	182mOhm @ 12.5A, 15V
Vgs(th) (Max) @ Id	7V @ 4.5mA
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 15 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	306W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247G
Package / Case	TO-247-3
Base Product Number	R6025