BSM300D12P2E001
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BSM300D12P2E001
ROHM 4-pin SiC Power MOSFETs | Digi-Key Daily
ROHM's SiC Power and Gate Driver Solutions

BSM300D12P2E001

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BSM300D12P2E001-ND
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BSM300D12P2E001
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MOSFET 2N-CH 1200V 300A MODULE
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22 Weeks
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Mosfet Array 1200V (1.2kV) 300A (Tc) 1875W Chassis Mount Module
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BSM300D12P2E001 Models
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Manufacturer
Rohm Semiconductor
Series
-
Packaging
Tray
Part Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
300A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 68mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
35000pF @ 10V
Power - Max
1875W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
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In-Stock: 8
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Tray
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1613,62000 €613,62 €
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:613,62000 €
Unit Price with VAT:742,48020 €