BSM180D12P2E002
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BSM180D12P2E002
ROHM's SiC Power and Gate Driver Solutions
4th Gen SiC MOSFETs

BSM180D12P2E002

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846-BSM180D12P2E002-ND
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BSM180D12P2E002
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MOSFET 2N-CH 1200V 204A MODULE
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22 Weeks
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Mosfet Array 1200V (1.2kV) 204A (Tc) 1360W (Tc) Chassis Mount Module
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 cms-datasheet
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Manufacturer
Rohm Semiconductor
Series
-
Packaging
Bulk
Part Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
204A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
18000pF @ 10V
Power - Max
1360W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
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In-Stock: 4
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Bulk
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1584,29000 €584,29 €
Unit Price without VAT:584,29000 €
Unit Price with VAT:706,99090 €