Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 300 mW Through Hole NS-B1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

UNR411F00A

DigiKey Part Number
UNR411F00ATB-ND - Tape & Reel (TR)
Manufacturer
Manufacturer Product Number
UNR411F00A
Description
TRANS PREBIAS PNP 50V NS-B1
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 300 mW Through Hole NS-B1
Datasheet
 Datasheet
Product Attributes
Filter Similar Products
Show Empty Attributes
Category
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 10V
Manufacturer
Panasonic Industry
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Packaging
Tape & Reel (TR)
Current - Collector Cutoff (Max)
500nA
Part Status
Obsolete
Frequency - Transition
80 MHz
Transistor Type
PNP - Pre-Biased
Power - Max
300 mW
Current - Collector (Ic) (Max)
100 mA
Mounting Type
Through Hole
Voltage - Collector Emitter Breakdown (Max)
50 V
Package / Case
3-SIP
Resistors Included
R1 and R2
Supplier Device Package
NS-B1
Resistor - Base (R1)
4.7 kOhms
Base Product Number
Resistor - Emitter Base (R2)
10 kOhms
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Obsolete
This product is no longer manufactured.