MJE803G is Obsolete and no longer manufactured.
Available Substitutes:

Direct


onsemi
In Stock: 13.172
Unit Price: 0,99000 €
Datasheet

Direct


onsemi
In Stock: 9.734
Unit Price: 1,41000 €
Datasheet

Direct


STMicroelectronics
In Stock: 1.925
Unit Price: 0,88000 €
Datasheet

Similar


STMicroelectronics
In Stock: 74
Unit Price: 0,71000 €
Datasheet
Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJE803G

DigiKey Part Number
MJE803GOS-ND
Manufacturer
Manufacturer Product Number
MJE803G
Description
TRANS NPN DARL 80V 4A TO-126
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 80 V 4 A 40 W Through Hole TO-126
Datasheet
 Datasheet
Product Attributes
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Category
Current - Collector Cutoff (Max)
100µA
Mfr
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A, 3V
Packaging
Bulk
Power - Max
40 W
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
4 A
Package / Case
TO-225AA, TO-126-3
Voltage - Collector Emitter Breakdown (Max)
80 V
Supplier Device Package
TO-126
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (4)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
BD679ASonsemi13.172BD679AS-ND0,99000 €Direct
BD681Gonsemi9.734BD681GOS-ND1,41000 €Direct
BD679ASTMicroelectronics1.925497-BD679A-ND0,88000 €Direct
BD679STMicroelectronics74497-5776-ND0,71000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes