Bipolar (BJT) Transistor NPN - Darlington 60 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)
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MJ11012G

DigiKey Part Number
MJ11012GOS-ND
Manufacturer
onsemi
Manufacturer Product Number
MJ11012G
Description
TRANS NPN DARL 60V 30A TO204
Manufacturer Standard Lead Time
14 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 60 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)
Datasheet
 Datasheet
EDA/CAD Models
MJ11012G Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 20A, 5V
Mfr
Power - Max
200 W
Packaging
Tray
Frequency - Transition
4MHz
Part Status
Active
Operating Temperature
-55°C ~ 200°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
30 A
Package / Case
TO-204AA, TO-3
Voltage - Collector Emitter Breakdown (Max)
60 V
Supplier Device Package
TO-204 (TO-3)
Vce Saturation (Max) @ Ib, Ic
4V @ 300mA, 30A
Base Product Number
Current - Collector Cutoff (Max)
1mA
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Additional Resources
In-Stock: 225
Factory Stock: 800
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Quantity
All prices are in EUR
Tray
QuantityUnit PriceExt Price
18,21000 €8,21 €
105,63700 €56,37 €
1004,18460 €418,46 €
5003,73436 €1.867,18 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:8,21000 €
Unit Price with VAT:9,93410 €
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