2N6517G is Obsolete and no longer manufactured.
Available Substitutes:

Direct


onsemi
In Stock: 2.554
Unit Price: 0,31000 €
Datasheet

Similar


onsemi
In Stock: 10.269
Unit Price: 0,31000 €
Datasheet
Bipolar (BJT) Transistor NPN 350 V 500 mA 200MHz 625 mW Through Hole TO-92 (TO-226)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2N6517G

DigiKey Part Number
2N6517GOS-ND
Manufacturer
Manufacturer Product Number
2N6517G
Description
TRANS NPN 350V 0.5A TO92
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 350 V 500 mA 200MHz 625 mW Through Hole TO-92 (TO-226)
Datasheet
 Datasheet
EDA/CAD Models
2N6517G Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 50mA, 10V
Mfr
Power - Max
625 mW
Packaging
Bulk
Frequency - Transition
200MHz
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
500 mA
Package / Case
TO-226-3, TO-92-3 Long Body
Voltage - Collector Emitter Breakdown (Max)
350 V
Supplier Device Package
TO-92 (TO-226)
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Base Product Number
Current - Collector Cutoff (Max)
50nA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (2)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
2N6517BUonsemi2.5542N6517BU-ND0,31000 €Direct
KSP42TAonsemi10.269KSP42TAFSCT-ND0,31000 €Similar
Obsolete
This product is no longer manufactured. View Substitutes or Alternative Package Types
Non-Cancelable/Non-Returnable