Name: IPN95R3K7P7ATMA1
Brand: Infineon Technologies
SKU: IPN95R3K7P7ATMA1TR-ND
Price: 1.2705 EUR
Availability: InStock

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IPN95R3K7P7ATMA1
cms-digikey-product-number	IPN95R3K7P7ATMA1TR-ND - Tape & Reel (TR) IPN95R3K7P7ATMA1CT-ND - Cut Tape (CT) IPN95R3K7P7ATMA1DKR-ND - Digi-Reel®
cms-manufacturer	Infineon Technologies
cms-manufacturer-product-number	IPN95R3K7P7ATMA1
cms-description	MOSFET N-CH 950V 2A SOT223
cms-standard-lead-time	17 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 950 V 2A (Tc) 6W (Tc) Surface Mount PG-SOT223
cms-datasheet	cms-datasheet
cms-eda-cad-models	IPN95R3K7P7ATMA1 Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	950 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.7Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	196 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	TO-261-4, TO-261AA
Base Product Number	IPN95R3

Unit Price without VAT:	1,05000 €
Unit Price with VAT:	1,27050 €

IPN95R3K7P7ATMA1