Name: IPI60R199CPXKSA2
Brand: Infineon Technologies
SKU: 448-IPI60R199CPXKSA2-ND
Price: 4.1866 EUR
Availability: InStock

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IPI60R199CPXKSA2
DigiKey Part Number	448-IPI60R199CPXKSA2-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPI60R199CPXKSA2
Description	HIGH POWER_LEGACY
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 16A (Tc) 139W (Tc) Through Hole PG-TO262-3-1
Datasheet	Datasheet
EDA/CAD Models	IPI60R199CPXKSA2 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.5V @ 660µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Series CoolMOS®	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 100 V
Part Status Active	Power Dissipation (Max) 139W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package PG-TO262-3-1
Current - Continuous Drain (Id) @ 25°C 16A (Tc)	Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPI60R199
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V

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In-Stock: 420

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Tube

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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without VAT:	3,46000 €
Unit Price with VAT:	4,18660 €

IPI60R199CPXKSA2