Name: IGB110S10S1XTMA1
Brand: Infineon Technologies
SKU: 448-IGB110S10S1XTMA1TR-ND
Price: 2.4805 EUR
Availability: InStock

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IGB110S10S1XTMA1
DigiKey Part Number	448-IGB110S10S1XTMA1TR-ND - Tape & Reel (TR) 448-IGB110S10S1XTMA1CT-ND - Cut Tape (CT) 448-IGB110S10S1XTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IGB110S10S1XTMA1
Description	GANFET N-CH 100V 9A 4TDFN
Manufacturer Standard Lead Time	25 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 9A (Ta), 23A (Tc) 2.5W (Ta), 15W (Tc) Surface Mount PG-TSON-4-2
Datasheet	Datasheet
EDA/CAD Models	IGB110S10S1XTMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 5V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 2.9V @ 3mA
Series CoolGaN™	Gate Charge (Qg) (Max) @ Vgs 3.4 nC @ 5 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±6.5V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 50 V
FET Type N-Channel	Power Dissipation (Max) 2.5W (Ta), 15W (Tc)
Technology GaNFET (Gallium Nitride)	Operating Temperature -40°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 100 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 23A (Tc)	Supplier Device Package PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On) 5V	Package / Case 4-PowerTDFN