Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Through Hole TO-18
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Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Through Hole TO-18
TO-206AA, TO-18-3 Metal Can

2N2907 TIN/LEAD

DigiKey Part Number
1514-2N2907TIN/LEAD-ND
Manufacturer
Central Semiconductor Corp
Manufacturer Product Number
2N2907 TIN/LEAD
Description
40V 600MA 400MW TH TRANSISTOR-SM
Manufacturer Standard Lead Time
18 Weeks
Customer Reference
Detailed Description
Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 1.8 W Through Hole TO-18
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Central Semiconductor Corp
Series
-
Packaging
Box
Part Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)
50nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
1.8 W
Frequency - Transition
200MHz
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Supplier Device Package
TO-18
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Quantity
All prices are in EUR
Box
QuantityUnit PriceExt Price
2.0001,08972 €2.179,44 €
Manufacturers Standard Package
Unit Price without VAT:1,08972 €
Unit Price with VAT:1,31856 €