EPC9084: 4A, 0 ~ 350V, Half H-Bridge

The EPC9084 development board is a 350 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring two EPC2050 enhancement mode (eGaN) field effect transistors (FETs). The purpose of this development board is to simplify the evaluation process of the EPC2050 eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9084 development board is 1.5" x 2" and contains two EPC2050 eGaN FETs in a half bridge configuration. As supplied, the high side gate drive uses a digital isolator and both FETs use the Silicon Labs SI8274GB1-IM gate driver. The board also contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation, as well as the option to add trimmer resistors for adjustable deadtime to provide separate high and low side inputs, and an isolator for the low side gate drive. GaN