Add To Favorites
SIHB33N60EF-GE3 N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)
Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 6,05000 € 6,05
10 5,44800 € 54,48
100 4,47940 € 447,94
500 3,75298 € 1.876,49
1.000 3,26872 € 3.268,72

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number SIHB33N60EF-GE3-ND
Copy   SIHB33N60EF-GE3-ND
Quantity Available 964
Can ship immediately
Manufacturer

Copy   PartSearchCore.DksusService3.PidVid
Manufacturer Part Number

SIHB33N60EF-GE3

Copy   SIHB33N60EF-GE3
Description MOSFET N-CH 600V 33A TO-263
Copy   MOSFET N-CH 600V 33A TO-263
Detailed Description

N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)

Copy   N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging ? Bulk ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 98 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3454pF @ 100V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
You May Also Be Interested In
  • SIHB33N60E-GE3 - Vishay Siliconix | SIHB33N60E-GE3-ND DigiKey Electronics
  • SIHB33N60E-GE3
  • Vishay Siliconix
  • MOSFET N-CH 600V 33A TO-263
  • Unit Price € 5,79000
  • SIHB33N60E-GE3-ND
Additional Resources
Standard Package ? 1.000

11:54:40 10/15/2018