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SIHB33N60E-GE3 N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D2PAK
Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 5,93000 € 5,93
10 5,29300 € 52,93
100 4,34030 € 434,03
500 3,51458 € 1.757,29
1.000 2,96410 € 2.964,10

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number SIHB33N60E-GE3-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

SIHB33N60E-GE3

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Description MOSFET N-CH 600V 33A TO-263
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Detailed Description

N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D2PAK

Copy   N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D2PAK
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series -
Packaging ? Bulk ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3508pF @ 100V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1.000
Other Names SIHB33N60EGE3

09:50:35 2/16/2019