SIA436DJ-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products

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SIA436DJ-T1-GE3 N-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

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Product Overview

Digi-Key Part Number	SIA436DJ-T1-GE3CT-ND	Copy
Quantity Available	18.114 Can ship immediately
Manufacturer	Vishay Siliconix	Copy
Manufacturer Part Number	SIA436DJ-T1-GE3	Copy
Description	MOSFET N-CH 8V 12A SC70-6L	Copy
Detailed Description	N-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single	Copy

Documents & Media

Datasheets	SiA436DJ
Video File	MOSFET Technologies for Power Conversion
Featured Product	SiA436DJ 8 V N-Channel TrenchFET Power MOSFET

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	9.4 mOhm @ 15.7A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25,2nC @ 5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1508pF @ 4V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6