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Product Overview
Digi-Key Part Number SI5515CDC-T1-GE3CT-ND
Quantity Available 0
Manufacturer

Manufacturer Part Number

SI5515CDC-T1-GE3

Description MOSFET N/P-CH 20V 4A 1206-8
Detailed Description

Mosfet Array N and P-Channel 20V 4A 3.1W Surface Mount 1206-8 ChipFET™

Documents & Media
Datasheets SI5515CDC
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 36 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 632pF @ 10V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Base Part Number SI5515
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI5515CDC-T1-GE3CT

00:07:45 8/15/2018

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,84000 € 0,84
10 0,74000 € 7,40
100 0,57090 € 57,09
500 0,42288 € 211,44
1.000 0,33829 € 338,29

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Alternate Package | This part is also available in the following packaging:
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