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SI4435DDY-T1-GE3 P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,74000 € 0,74
10 0,64300 € 6,43
100 0,49630 € 49,63
500 0,36764 € 183,82
1.000 0,29411 € 294,11

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number SI4435DDY-T1-GE3CT-ND
Copy   SI4435DDY-T1-GE3CT-ND
Quantity Available 18
Can ship immediately
Manufacturer

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Manufacturer Part Number

SI4435DDY-T1-GE3

Copy   SI4435DDY-T1-GE3
Description MOSFET P-CH 30V 11.4A 8-SOIC
Copy   MOSFET P-CH 30V 11.4A 8-SOIC
Manufacturer Standard Lead Time 22 Weeks
Detailed Description

P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO

Copy   P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
Documents & Media
Datasheets Si4435DDY
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Ultra Librarian
Catalog Page 1405 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24 mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI4435DDY-T1-GE3CT
Alternate Package | This part is also available in the following packaging:

01:49:14 1/16/2019