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Product Overview
Digi-Key Part Number SI3900DV-T1-E3CT-ND
Quantity Available 0
Manufacturer

Manufacturer Part Number

SI3900DV-T1-E3

Description MOSFET 2N-CH 20V 2A 6-TSOP
Manufacturer Standard Lead Time 33 Weeks
Detailed Description

Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

Documents & Media
Datasheets SI3900DV
Catalog Page 1403 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Base Part Number SI3900
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI3900DV-T1-E3CT

13:50:38 8/17/2018

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,65000 € 0,65
10 0,56400 € 5,64
100 0,43490 € 43,49
500 0,32218 € 161,09
1.000 0,25775 € 257,75

Submit a request for quotation on quantities greater than those displayed.

Alternate Package | This part is also available in the following packaging:
  • Tape & Reel (TR) ? : SI3900DV-T1-E3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 0
  • Unit Price: € 0,22678
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