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SI3410DV-T1-GE3 N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP
Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,80000 € 0,80
10 0,70500 € 7,05
100 0,54390 € 54,39
500 0,40286 € 201,43
1.000 0,32229 € 322,29

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Product Overview
Digi-Key Part Number SI3410DV-T1-GE3CT-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

SI3410DV-T1-GE3

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Description MOSFET N-CH 30V 8A 6-TSOP
Copy   MOSFET N-CH 30V 8A 6-TSOP
Detailed Description

N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

Copy   N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP
Documents & Media
Datasheets SI3410DV
Video File MOSFET Technologies for Power Conversion
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 15V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI3410DV-T1-GE3CT
Alternate Package | This part is also available in the following packaging:
  • Tape & Reel (TR) ? : SI3410DV-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 0
  • Unit Price: € 0,28357

20:08:06 10/23/2018