SI2347DS-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products

This feature is only available for registered users. Please Login or Register.

This feature is temporarily unavailable. We are working diligently to get this fixed. Thank you for your patience.

SI2347DS-T1-GE3 P-Channel 30V 5A (Tc) 1.7W (Tc) Surface Mount SOT-23-3

Price & Procurement

All prices are in EUR.

Submit a request for quotation on quantities greater than those displayed.

Product Overview

Digi-Key Part Number	SI2347DS-T1-GE3CT-ND	Copy
Quantity Available	51.249 Can ship immediately
Manufacturer	Vishay Siliconix	Copy
Manufacturer Part Number	SI2347DS-T1-GE3	Copy
Description	MOSFET P-CH 30V 5A SOT-23	Copy
Manufacturer Standard Lead Time	32 Weeks
Detailed Description	P-Channel 30V 5A (Tc) 1.7W (Tc) Surface Mount SOT-23-3	Copy

Documents & Media

Datasheets	SI2347DS-T1-GE3
Video File	MOSFET Technologies for Power Conversion
PCN Assembly/Origin	Wafer Fab Addition 22/Jun/2015

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	42 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	705pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3