SI2347DS-T1-GE3 Vishay Siliconix | Discrete Semiconductor Products

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Product Overview

Digi-Key Part Number	SI2347DS-T1-GE3CT-ND
Quantity Available	25.828 Can ship immediately
Manufacturer	Vishay Siliconix
Manufacturer Part Number	SI2347DS-T1-GE3
Description	MOSFET P-CH 30V 5A SOT-23
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	22 Weeks
Detailed Description	P-Channel 30V 5A (Tc) 1.7W (Tc) Surface Mount SOT-23-3

Documents & Media

Datasheets	SI2347DS-T1-GE3
Video File	MOSFET Technologies for Power Conversion
PCN Assembly/Origin	Wafer Fab Addition 22/Jun/2015

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	42 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	705pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3