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SI2342DS-T1-GE3 N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23
Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,52000 € 0,52
10 0,43600 € 4,36
100 0,32710 € 32,71
500 0,23982 € 119,91
1.000 0,18532 € 185,32

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Product Overview
Digi-Key Part Number SI2342DS-T1-GE3CT-ND
Copy   SI2342DS-T1-GE3CT-ND
Quantity Available 55.327
Can ship immediately
Manufacturer

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Manufacturer Part Number

SI2342DS-T1-GE3

Copy   SI2342DS-T1-GE3
Description MOSFET N-CH 8V 6A SOT-23
Copy   MOSFET N-CH 8V 6A SOT-23
Detailed Description

N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23

Copy   N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23
Documents & Media
Datasheets SI2342DS-T1-GE3
Video File MOSFET Technologies for Power Conversion
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 17 mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15,8nC @ 4,5V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 4V
FET Feature -
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI2342DS-T1-GE3CT
Alternate Package | This part is also available in the following packaging:
  • Tape & Reel (TR) ? : SI2342DS-T1-GE3TR-ND
  • Minimum Quantity: 3.000
  • Quantity Available: 54.000 - Immediate
  • Unit Price: € 0,16405
  • Digi-Reel® ? : SI2342DS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 55.327 - Immediate
  • Unit Price: Digi-Reel®

02:36:39 3/24/2019