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SI2303CDS-T1-GE3 P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,49000 € 0,49
10 0,38700 € 3,87
100 0,26610 € 26,61
500 0,18242 € 91,21
1.000 0,13682 € 136,82

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number SI2303CDS-T1-GE3CT-ND
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Quantity Available 0
Manufacturer

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Manufacturer Part Number

SI2303CDS-T1-GE3

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Description MOSFET P-CH 30V 2.7A SOT23-3
Copy   MOSFET P-CH 30V 2.7A SOT23-3
Detailed Description

P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)

Copy   P-Channel 30V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)
Documents & Media
Datasheets SI2303CDS
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Ultra Librarian
Catalog Page 1404 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 15V
FET Feature -
Power Dissipation (Max) 1W (Ta), 2.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI2303CDS-T1-GE3CT
Alternate Package | This part is also available in the following packaging:

05:16:12 3/22/2019