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IPP110N20NAAKSA1 N-Channel 200V 88A (Tc) 300W (Tc) Through Hole PG-TO220-3
Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 6,78000 € 6,78
10 6,12900 € 61,29
25 5,84480 € 146,12
100 5,07470 € 507,47
500 4,41902 € 2.209,51

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Product Overview
Digi-Key Part Number IPP110N20NAAKSA1-ND
Copy   IPP110N20NAAKSA1-ND
Quantity Available 1.623
Can ship immediately
Manufacturer

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Manufacturer Part Number

IPP110N20NAAKSA1

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Description MOSFET N-CH 200V 88A TO220-3
Copy   MOSFET N-CH 200V 88A TO220-3
Manufacturer Standard Lead Time 52 Weeks
Detailed Description

N-Channel 200V 88A (Tc) 300W (Tc) Through Hole PG-TO220-3

Copy   N-Channel 200V 88A (Tc) 300W (Tc) Through Hole PG-TO220-3
Documents & Media
Datasheets IPx(107,110)N20NA
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
Simulation Models OptiMOS™ Power MOSFET 200V N-Channel Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptimWatt™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 500
Other Names IPP110N20NA
IPP110N20NA-ND
SP000877672

13:21:22 7/16/2019