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IPA105N15N3GXKSA1 N-Channel 150V 37A (Tc) 40.5W (Tc) Through Hole PG-TO220-FP
Price & Procurement

All prices are in EUR.
Price Break Unit Price Extended Price
1 4,21000 € 4,21
10 3,77500 € 37,75
25 3,56840 € 89,21
100 3,09280 € 309,28
500 2,63280 € 1.316,40
2.500 2,11470 € 5.286,76

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPA105N15N3GXKSA1-ND
Copy   IPA105N15N3GXKSA1-ND
Quantity Available 2.566
Can ship immediately

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Manufacturer Part Number


Copy   IPA105N15N3GXKSA1
Description MOSFET N-CH 150V 37A TO220-FP
Copy   MOSFET N-CH 150V 37A TO220-FP
Detailed Description

N-Channel 150V 37A (Tc) 40.5W (Tc) Through Hole PG-TO220-FP

Copy   N-Channel 150V 37A (Tc) 40.5W (Tc) Through Hole PG-TO220-FP
Documents & Media
Datasheets IPA105N15N3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Fab/Test Site Transfer 28/May/2015
PCN Other Multiple Changes 09/Jul/2014
Simulation Models OptiMOS™ Power MOSFET 150V N-Channel Spice Model
Product Attributes Select All
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 75V
FET Feature -
Power Dissipation (Max) 40.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 500
Other Names IPA1-ND05N15N3GXKSA1
IPA105N15N3 G
IPA105N15N3 G-ND

10:08:39 6/20/2019