C2M0160120D Cree/Wolfspeed | Discrete Semiconductor Products

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C2M0160120D N-Channel 1200V 19A (Tc) 125W (Tc) Through Hole TO-247-3

Price & Procurement

All prices are in EUR.

Price Break	Unit Price	Extended Price
1	7,41000	€ 7,41

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Product Overview

Digi-Key Part Number	C2M0160120D-ND	Copy
Quantity Available	2.683 Can ship immediately
Manufacturer	Cree/Wolfspeed	Copy
Manufacturer Part Number	C2M0160120D	Copy
Description	MOSFET N-CH 1200V 19A TO-247	Copy
Manufacturer Standard Lead Time	52 Weeks
Detailed Description	N-Channel 1200V 19A (Tc) 125W (Tc) Through Hole TO-247-3	Copy

Documents & Media

Datasheets	C2M0160120D
Featured Product	Cree - Silicon Carbide Power MOSFETs SpeedFit™ Online Simulator

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Cree/Wolfspeed
Series	Z-FET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	196 mOhm @ 10A, 20V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	32,6nC @ 20V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	527pF @ 800V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3