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C2M0080120D N-Channel 1200V 36A (Tc) 192W (Tc) Through Hole TO-247-3
Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 15,60000 € 15,60

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Product Overview
Digi-Key Part Number C2M0080120D-ND
Copy   C2M0080120D-ND
Quantity Available 16.082
Can ship immediately
Manufacturer

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Manufacturer Part Number

C2M0080120D

Copy   C2M0080120D
Description MOSFET N-CH 1200V 31.6A TO247
Copy   MOSFET N-CH 1200V 31.6A TO247
Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 1200V 36A (Tc) 192W (Tc) Through Hole TO-247-3

Copy   N-Channel 1200V 36A (Tc) 192W (Tc) Through Hole TO-247-3
Documents & Media
Datasheets C2M0080120D
Mfg Application Notes SiC MOSFET Isolated Gate Driver
Featured Product Cree - Silicon Carbide Power MOSFETs
SpeedFit™ Online Simulator
Product Attributes Select All
Categories
Manufacturer Cree/Wolfspeed
Series C2M™
Packaging ? Bulk ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 1000V
FET Feature -
Power Dissipation (Max) 192W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 30

14:55:30 5/23/2019