2SD1816S-H is Obsolete and no longer manufactured.
Available Substitutes:

MFR Recommended


onsemi
In Stock: 880
Unit Price: 1,85000 €
Datasheet
Bipolar (BJT) Transistor NPN 100 V 4 A 180MHz 1 W Through Hole TP
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2SD1816S-H

DigiKey Part Number
2SD1816S-H-ND
Manufacturer
Manufacturer Product Number
2SD1816S-H
Description
TRANS NPN 100V 4A TP
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 100 V 4 A 180MHz 1 W Through Hole TP
Datasheet
 Datasheet
EDA/CAD Models
2SD1816S-H Models
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA, 5V
Mfr
Power - Max
1 W
Packaging
Bulk
Frequency - Transition
180MHz
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
4 A
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Voltage - Collector Emitter Breakdown (Max)
100 V
Supplier Device Package
TP
Vce Saturation (Max) @ Ib, Ic
400mV @ 200mA, 2A
Base Product Number
Current - Collector Cutoff (Max)
1µA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (1)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
2SD1816S-TL-Eonsemi8802SD1816S-TL-EOSCT-ND1,85000 €MFR Recommended
Obsolete
Marketplace Stock: 41.000 View Now
This product is no longer manufactured. View Substitutes

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41.000In Stock
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