Renesas Electronics Corporation

RBA300N10EANS-3UA02/RBA300N10EHPF-5UA02 N-Channel Power MOSFETs

Renesas N-channel MOSFETs achieve a reduction in on-resistance, Qg characteristics, Qgd, and volume

Image of Renesas Electronics Corporation RBA300N10EANS-3UA02/RBA300N10EHPF-5UA02 N-Channel Power MOSFETs Renesas RBA300N10EANS-3UA02 and RBA300N10EHPF-5UA02 N-channel MOSFETs are designed for high-current switching applications. This product adopts the latest wafer process called ANM3. Compared to the conventional ANM2, the ANM3 achieves a 30% reduction in on-resistance, a 10% reduction in Qg characteristics, and a 40% reduction in Qgd. The package achieves a 50% reduction in volume compared to the traditional TO-263, contributing to downsizing customer sets.

Applications
  • Motor control
  • Battery management systems (BMS)
  • Power management
  • Charging applications
Features
  • Low power loss by low on-resistance
  • Uses the same package as competitors
  • Equivalent thermal performance and low surge to competitor

RBA300N10EANS-3UA02/RBA300N10EHPF-5UA02 N-Channel Power MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
100V-300A-N-CHANNEL MOSFET FOR HRBA300N10EANS-3UA02#GB0100V-300A-N-CHANNEL MOSFET FOR H2455 - Immediate$4.50View Details
100V-300A-N-CHANNEL MOSFET FOR HRBA300N10EHPF-5UA02#GB0100V-300A-N-CHANNEL MOSFET FOR H915 - Immediate$4.43View Details
Published: 2024-12-19