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Product Overview
Digi-Key Part Number IRFDC20PBF-ND
Quantity Available 2.578
Can ship immediately
Manufacturer

Manufacturer Part Number

IRFDC20PBF

Description MOSFET N-CH 600V 320MA 4-DIP
Expanded Description N-Channel 600V 320mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 9 Weeks
Documents & Media
Datasheets IRFDC20
Video File MOSFET Technologies for Power Conversion
Catalog Page 1269 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 4.4 Ohm @ 190mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
Additional Resources
Standard Package ? 2.500
Other Names *IRFDC20PBF

13:47:26 1/19/2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 2,06000 2,06
10 1,85700 18,57
25 1,75200 43,80
100 1,49240 149,24
250 1,40132 350,33
500 1,22614 613,07
1.000 1,01595 1.015,95
2.500 0,94588 2.364,71
5.000 0,91085 4.554,25

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