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Product Overview
Digi-Key Part Number IRFD110PBF-ND
Quantity Available 4.464
Can ship immediately
Manufacturer

Manufacturer Part Number

IRFD110PBF

Description MOSFET N-CH 100V 1A 4-DIP
Expanded Description N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 9 Weeks
Documents & Media
Datasheets IRFD110
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Accelerated Designs
Catalog Page 1269 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Rds On (Max) @ Id, Vgs 540 mOhm @ 600mA, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
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Additional Resources
Standard Package ? 100
Other Names *IRFD110PBF

11:34:56 1/19/2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,69000 0,69
10 0,60500 6,05
25 0,56840 14,21
100 0,46380 46,38
250 0,43080 107,70
500 0,36664 183,32
1.000 0,29331 293,31
2.500 0,26582 664,55
5.000 0,24748 1.237,42

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