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Product Overview
Digi-Key Part Number TK62J60WS1VQ-ND
Quantity Available 150
Can ship immediately
Manufacturer

Manufacturer Part Number

TK62J60W,S1VQ

Description MOSFET N CH 600V 61.8A TO-3P(N)
Expanded Description N-Channel 600V 61.8A (Ta) 400W (Tc) Through Hole TO-3P(N)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks
Documents & Media
Datasheets TK62J60W
Product Attributes Select All
Categories
Manufacturer

Toshiba Semiconductor and Storage

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 61.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.7V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 300V
Vgs (Max) ±30V
FET Feature Super Junction
Power Dissipation (Max) 400W (Tc)
Rds On (Max) @ Id, Vgs 38 mOhm @ 30.9A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3
 
Additional Resources
Standard Package ? 25
Other Names TK62J60W,S1VQ(O
TK62J60WS1VQ

17:42:22 1/24/2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 14,25000 14,25
10 12,95700 129,57
25 11,98560 299,64
100 11,01370 1.101,37

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