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Product Overview
Digi-Key Part Number IRFB4332PBF-ND
Quantity Available 1.365
Can ship immediately
Manufacturer

Manufacturer Part Number

IRFB4332PBF

Description MOSFET N-CH 250V 60A TO-220AB
Expanded Description N-Channel 250V 60A (Tc) 390W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
Documents & Media
Datasheets IRFB4332PbF
Other Related Documents Part Number Guide
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Design Resources IRFB4332PBF Saber Model
IRFB4332PBF Spice Model
Featured Product Data Processing Systems
PCN Assembly/Origin Mosfet Backend Wafer Processing 23/Oct/2013
PCN Packaging Package Drawing Update 19/Aug/2015
Catalog Page 1258 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5860pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 390W (Tc)
Rds On (Max) @ Id, Vgs 33 mOhm @ 35A, 10V
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 50
Other Names SP001556040

02:50:23 3/25/2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 3,32000 3,32
10 2,98400 29,84
100 2,44510 244,51
500 2,08142 1.040,71
1.000 1,75542 1.755,42

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