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Product Overview
Digi-Key Part Number IPP048N12N3 G-ND
Quantity Available 2.063
Can ship immediately
Manufacturer

Manufacturer Part Number

IPP048N12N3 G

Description MOSFET N-CH 120V 100A TO220-3
Expanded Description N-Channel 120V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets IPP048N12N3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
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Categories
Manufacturer

Infineon Technologies

Series OptiMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 182nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 60V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Rds On (Max) @ Id, Vgs 4.8 mOhm @ 100A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 500
Other Names IPP048N12N3G
IPP048N12N3GXKSA1
SP000652734

21:44:32 3/22/2017

Price & Procurement
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 3,49000 3,49
10 3,13700 31,37
100 2,57030 257,03
500 2,18804 1.094,02
1.000 1,84534 1.845,34

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